UT2321 mosfet equivalent, p-channel mosfet.
* RDS(ON)<55mΩ @VGS=-4.5V * RDS(ON)<80mΩ @VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
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3.Drain
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FEATURES
* RDS(ON)<55mΩ @VGS=-4.5V * RDS(ON)<80mΩ @VGS=-2.5V * Low capacitance * Low gate charge * Fast switch.
Power MOSFET
The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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FEATURES
* RDS(ON)<55mΩ @V.
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